Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK IRFS7534TRLPBF
- RS Stock No.:
- 820-8873P
- Mfr. Part No.:
- IRFS7534TRLPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 20 - 48 | £2.19 |
| 50 - 98 | £2.05 |
| 100 - 198 | £1.905 |
| 200 + | £1.76 |
*price indicative
- RS Stock No.:
- 820-8873P
- Mfr. Part No.:
- IRFS7534TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 195 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Series | StrongIRFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 294 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 186 nC @ 10 V | |
| Width | 9.65mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series StrongIRFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 294 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 186 nC @ 10 V | ||
Width 9.65mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 294W Maximum Power Dissipation - IRFS7534TRLPBF
This MOSFET is engineered for efficient power management in a range of electronic applications. With the ability to handle continuous drain currents up to 195A and a drain-source voltage rating of 60V, it delivers effective performance for various tasks. Its capabilities in surface-mount configurations enhance circuit efficiency and reliability for professionals in automation and electronics.
Features & Benefits
• High current capacity supports demanding loads
• Low Rds(on) of 2.4mΩ improves energy efficiency
• Designed for high temperature operation up to +175°C
• Robust avalanche and dynamic dV/dt ruggedness for dependable operation
• Fully characterised capacitance facilitates accurate switching performance
• Low Rds(on) of 2.4mΩ improves energy efficiency
• Designed for high temperature operation up to +175°C
• Robust avalanche and dynamic dV/dt ruggedness for dependable operation
• Fully characterised capacitance facilitates accurate switching performance
Applications
• Suitable for brushed and BLDC motor drive circuits
• Effective for battery-powered and power converters
• Useful in half-bridge and full-bridge topologies for various designs
• Applicable in DC/AC inverters and resonant mode power supplies
• Ideal for redundant power switches in critical systems
• Effective for battery-powered and power converters
• Useful in half-bridge and full-bridge topologies for various designs
• Applicable in DC/AC inverters and resonant mode power supplies
• Ideal for redundant power switches in critical systems
How does this component handle thermal management?
It operates efficiently under high thermal conditions with a maximum temperature of +175°C.
What are the implications of the low Rds(on) value?
The low on-resistance minimises conduction losses, leading to enhanced efficiency in power distribution.
Can it be used in applications with variable load conditions?
Yes, its high current capacity and robust characteristics make it capable of managing fluctuating load conditions effectively.
What type of mounting is recommended for optimal performance?
Surface mount technology is suggested for efficient heat dissipation and compact integration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
