Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF
- RS Stock No.:
- 820-8833
- Mfr. Part No.:
- IRFB7530PBF
- Brand:
- Infineon
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£5.32
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£6.38
(inc. VAT)
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In Stock
- 860 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.66 | £5.32 |
| 20 - 48 | £2.37 | £4.74 |
| 50 - 98 | £2.235 | £4.47 |
| 100 - 198 | £2.075 | £4.15 |
| 200 + | £1.915 | £3.83 |
*price indicative
- RS Stock No.:
- 820-8833
- Mfr. Part No.:
- IRFB7530PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 195 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | StrongIRFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 274 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 60 V | ||
Series StrongIRFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 274 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 16.51mm | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF
This high current N-channel MOSFET is engineered for a range of power applications. Its advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.
Features & Benefits
• Maximum continuous drain current of 195A
• Wide operating temperature range from -55°C to +175°C
• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness
• Fully characterised capacitance and avalanche SOA
• Lead-free and complies with RoHS regulations for environmental safety
• Wide operating temperature range from -55°C to +175°C
• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness
• Fully characterised capacitance and avalanche SOA
• Lead-free and complies with RoHS regulations for environmental safety
Applications
• Used in brushed motor drive
• Appropriate for half-bridge and full-bridge topologies
• Suitable for synchronous rectifier
• Ideal for battery-powered circuits and DC/DC converters
• Engaged in AC/DC and DC/AC inverter systems
• Appropriate for half-bridge and full-bridge topologies
• Suitable for synchronous rectifier
• Ideal for battery-powered circuits and DC/DC converters
• Engaged in AC/DC and DC/AC inverter systems
What is the maximum gate threshold voltage for this component?
The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.
Can this MOSFET operate in high-temperature environments?
Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.
How does this MOSFET perform in terms of power dissipation?
It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.
Is it suitable for use in both DC and AC applications?
This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
