Vishay SQ Rugged P-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK SQD19P06-60L_GE3
- RS Stock No.:
- 819-3936P
- Mfr. Part No.:
- SQD19P06-60L_GE3
- Brand:
- Vishay
Subtotal 10 units (supplied on a continuous strip)*
£8.80
(exc. VAT)
£10.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,010 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £0.88 |
*price indicative
- RS Stock No.:
- 819-3936P
- Mfr. Part No.:
- SQD19P06-60L_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | SQ Rugged | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 46 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Height | 2.38mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series SQ Rugged | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 46 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Height 2.38mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor