Vishay SQ Rugged N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC SQ4850EY-T1_GE3

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Subtotal 100 units (supplied on a continuous strip)*

£85.80

(exc. VAT)

£103.00

(inc. VAT)

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100 - 180£0.858
200 - 480£0.776
500 - 980£0.73
1000 +£0.685

*price indicative

Packaging Options:
RS Stock No.:
819-3923P
Mfr. Part No.:
SQ4850EY-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Series

SQ Rugged

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

47 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

20 nC @ 10 V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.55mm

COO (Country of Origin):
CN

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101


MOSFET Transistors, Vishay Semiconductor