Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3

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Subtotal 20 units (supplied on a continuous strip)*

£10.86

(exc. VAT)

£13.04

(inc. VAT)

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Units
Per unit
20 +£0.543

*price indicative

Packaging Options:
RS Stock No.:
819-3920P
Mfr. Part No.:
SQ4431EY-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

30 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.55mm

COO (Country of Origin):
CN

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor