Dual N/P-Channel MOSFET Transistor, 2.7 A, 3.8 A, 30 V, 8-Pin 1206 ChipFET Vishay SI5504BDC-T1-GE3

Discontinued
Packaging Options:
RS Stock No.:
818-1337
Mfr. Part No.:
SI5504BDC-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

2.7 A, 3.8 A

Maximum Drain Source Voltage

30 V

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

100 mΩ, 235 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.12 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

3.1mm

Width

1.7mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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