Dual N/P-Channel MOSFET Transistor, 2.7 A, 3.8 A, 30 V, 8-Pin 1206 ChipFET Vishay SI5504BDC-T1-GE3
- RS Stock No.:
- 818-1337
- Mfr. Part No.:
- SI5504BDC-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
£10.74
(exc. VAT)
£12.88
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | £0.537 | £10.74 |
| 300 - 580 | £0.412 | £8.24 |
| 600 - 1480 | £0.364 | £7.28 |
| 1500 - 2980 | £0.288 | £5.76 |
| 3000 + | £0.268 | £5.36 |
*price indicative
- RS Stock No.:
- 818-1337
- Mfr. Part No.:
- SI5504BDC-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 2.7 A, 3.8 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | 1206 ChipFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 100 mΩ, 235 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 3.12 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V | |
| Length | 3.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2.7 A, 3.8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type 1206 ChipFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 100 mΩ, 235 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 3.12 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 4.5 nC @ 10 V | ||
Length 3.1mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 1.7mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN