Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3
- RS Stock No.:
- 818-1302P
- Mfr. Part No.:
- SI4909DY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£61.40
(exc. VAT)
£73.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,980 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 180 | £0.614 |
| 200 - 480 | £0.52 |
| 500 - 980 | £0.483 |
| 1000 + | £0.462 |
*price indicative
- RS Stock No.:
- 818-1302P
- Mfr. Part No.:
- SI4909DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.5 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 34 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 3.2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 41.5 nC @ 10 V | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.55mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.5 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 3.2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 41.5 nC @ 10 V | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.55mm | ||
- COO (Country of Origin):
- CN
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