Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3

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Subtotal (1 pack of 20 units)*

£14.44

(exc. VAT)

£17.32

(inc. VAT)

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Per Pack*
20 - 80£0.722£14.44
100 - 180£0.614£12.28
200 - 480£0.52£10.40
500 - 980£0.483£9.66
1000 +£0.462£9.24

*price indicative

Packaging Options:
RS Stock No.:
818-1302
Mfr. Part No.:
SI4909DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Number of Elements per Chip

2

Transistor Material

Si

Width

4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

41.5 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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