N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3
- RS Stock No.:
- 815-2635P
- Mfr. Part No.:
- SIHF640L-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (5 reels of 10 units)**. Quantities below 150 on continuous strip
£77.55
(exc. VAT)
£93.05
(inc. VAT)
Available to back order for despatch 04/07/2025*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit |
|---|---|
| 50 - 90 | £1.458 |
| 100 - 240 | £1.318 |
| 250 - 490 | £1.242 |
| 500 + | £1.163 |
**price indicative
- RS Stock No.:
- 815-2635P
- Mfr. Part No.:
- SIHF640L-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 11.3mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.67mm | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 11.3mm | ||