Vishay TrenchFET P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 SISS23DN-T1-GE3
- RS Stock No.:
- 814-1314P
- Mfr. Part No.:
- SISS23DN-T1-GE3
- Brand:
- Vishay
Subtotal 20 units (supplied on a continuous strip)*
£8.46
(exc. VAT)
£10.16
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,900 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 + | £0.423 |
*price indicative
- RS Stock No.:
- 814-1314P
- Mfr. Part No.:
- SISS23DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 27 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | PowerPAK 1212-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 11.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 57 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.3mm | |
| Transistor Material | Si | |
| Length | 3.3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 195 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.78mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type PowerPAK 1212-8 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.3mm | ||
Transistor Material Si | ||
Length 3.3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 195 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.78mm | ||
- COO (Country of Origin):
- CN
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