N-Channel MOSFET, 21 A, 25 V, 8-Pin PowePAK 1212 Vishay SIS430DN-T1-GE3

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Subtotal 10 units (supplied on a continuous strip)*

£9.88

(exc. VAT)

£11.86

(inc. VAT)

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10 +£0.988

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Packaging Options:
RS Stock No.:
814-1308P
Mfr. Part No.:
SIS430DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

25 V

Package Type

PowePAK 1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

26.5 nC @ 10 V

Length

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Width

3.15mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.12mm

COO (Country of Origin):
CN

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor