Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
- RS Stock No.:
- 814-1225P
- Mfr. Part No.:
- SIA517DJ-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£77.00
(exc. VAT)
£92.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 480 | £0.385 |
| 500 - 980 | £0.324 |
| 1000 - 1980 | £0.306 |
| 2000 + | £0.262 |
*price indicative
- RS Stock No.:
- 814-1225P
- Mfr. Part No.:
- SIA517DJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.3 A, 4.5 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 65 mΩ, 170 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 6.5 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 2.15mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 13.1 nC @ 8 V, 9.7 nC @ 8 V | |
| Length | 2.15mm | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.3 A, 4.5 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 65 mΩ, 170 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 6.5 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 2.15mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 13.1 nC @ 8 V, 9.7 nC @ 8 V | ||
Length 2.15mm | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Vishay Semiconductor
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