Vishay N-Channel MOSFET, 12 A, 30 V, 6-Pin SOT-363 SIA462DJ-T1-GE3

Subtotal 50 units (supplied on a continuous strip)*

£3.70

(exc. VAT)

£4.45

(inc. VAT)

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50 +£0.074

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Packaging Options:
RS Stock No.:
814-1222P
Mfr. Part No.:
SIA462DJ-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

11 nC @ 10 V

Length

2.15mm

Width

2.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor