Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3

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Subtotal 200 units (supplied on a reel)*

£57.40

(exc. VAT)

£68.80

(inc. VAT)

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200 - 480£0.287
500 - 980£0.269
1000 - 1980£0.233
2000 +£0.194

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Packaging Options:

RS Stock No.:
812-3205P
Mfr. Part No.:
SI4178DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Width

4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.55mm