Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3

Bulk discount available

Subtotal 200 units (supplied on a reel)*

£58.20

(exc. VAT)

£69.80

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,760 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
200 - 480£0.291
500 - 980£0.274
1000 - 1980£0.237
2000 +£0.197

*price indicative

Packaging Options:
RS Stock No.:
812-3205P
Mfr. Part No.:
SI4178DY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Length

5mm

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor