Dual N-Channel MOSFET, 2 A, 20 V, 6-Pin TSOP Vishay SI3900DV-T1-GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
812-3170
Mfr. Part No.:
SI3900DV-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

830 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Length

3.1mm

Transistor Material

Si

Number of Elements per Chip

2

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1mm

COO (Country of Origin):
CN

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