Vishay P-Channel MOSFET, 760 mA, 30 V, 6-Pin SC-89-6 SI1077X-T1-GE3
- RS Stock No.:
- 812-3050P
- Mfr. Part No.:
- SI1077X-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£45.60
(exc. VAT)
£54.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,660 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 980 | £0.228 |
| 1000 - 1980 | £0.206 |
| 2000 - 4980 | £0.194 |
| 5000 + | £0.182 |
*price indicative
- RS Stock No.:
- 812-3050P
- Mfr. Part No.:
- SI1077X-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 760 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SC-89-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 244 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 236 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 1.2mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 4.43 nC @ 4.5 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 760 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SC-89-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 244 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 236 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 1.2mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 4.43 nC @ 4.5 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 1.7mm | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
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