Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF
- RS Stock No.:
- 812-0654P
- Mfr. Part No.:
- IRFR9220TRPBF
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£55.90
(exc. VAT)
£67.10
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,920 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 120 | £1.118 |
| 125 - 245 | £1.008 |
| 250 - 495 | £0.948 |
| 500 + | £0.89 |
*price indicative
- RS Stock No.:
- 812-0654P
- Mfr. Part No.:
- IRFR9220TRPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.38mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Height 2.38mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Fast switching
Fully avalanche rated
Fast switching
Fully avalanche rated
MOSFET Transistors, Vishay Semiconductor