onsemi SuperFET II N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E
- RS Stock No.:
- 809-5053
- Mfr. Part No.:
- FCH041N60E
- Brand:
- onsemi
Subtotal (1 unit)*
£10.78
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£12.94
(inc. VAT)
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Units | Per unit |
---|---|
1 + | £10.78 |
*price indicative
- RS Stock No.:
- 809-5053
- Mfr. Part No.:
- FCH041N60E
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 77 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-247 | |
Series | SuperFET II | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 41 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 592 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 285 nC @ 10 V | |
Length | 15.87mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Width | 4.82mm | |
Height | 20.82mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 77 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Series SuperFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 592 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 285 nC @ 10 V | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 4.82mm | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.