onsemi PowerTrench N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870
- RS Stock No.:
- 809-0950P
- Mfr. Part No.:
- FDD8870
- Brand:
- onsemi
Subtotal 5 units (supplied on a continuous strip)*
£1.94
(exc. VAT)
£2.33
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 8,740 unit(s), ready to ship
Units | Per unit |
|---|---|
| 5 + | £0.388 |
*price indicative
- RS Stock No.:
- 809-0950P
- Mfr. Part No.:
- FDD8870
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.3 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.3 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 6.22mm | ||
Transistor Material Si | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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