onsemi PowerTrench N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 FDC855N
- RS Stock No.:
- 809-0871P
- Mfr. Part No.:
- FDC855N
- Brand:
- onsemi
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£77.00
(exc. VAT)
£92.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 40 unit(s) shipping from 20 October 2025
- Plus 999,999,940 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 480 | £0.385 |
| 500 - 980 | £0.334 |
| 1000 - 1980 | £0.293 |
| 2000 + | £0.267 |
*price indicative
- RS Stock No.:
- 809-0871P
- Mfr. Part No.:
- FDC855N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.1 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 39 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 3mm | |
| Width | 1.7mm | |
| Typical Gate Charge @ Vgs | 9.2 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 39 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 3mm | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 9.2 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.