onsemi PowerTrench P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-23 FDC642P
- RS Stock No.:
- 809-0865P
- Mfr. Part No.:
- FDC642P
- Brand:
- onsemi
Subtotal 20 units (supplied on a continuous strip)*
£2.04
(exc. VAT)
£2.44
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,980 unit(s), ready to ship
Units | Per unit |
---|---|
20 + | £0.102 |
*price indicative
- RS Stock No.:
- 809-0865P
- Mfr. Part No.:
- FDC642P
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 4 A | |
Maximum Drain Source Voltage | 20 V | |
Series | PowerTrench | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 100 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Length | 3mm | |
Maximum Operating Temperature | +150 °C | |
Width | 1.7mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 11 nC @ 4.5 V | |
Transistor Material | Si | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 11 nC @ 4.5 V | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.