onsemi PowerTrench P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-23 FDC642P
- RS Stock No.:
- 809-0865
- Mfr. Part No.:
- FDC642P
- Brand:
- onsemi
Subtotal (1 pack of 20 units)*
£2.04
(exc. VAT)
£2.44
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,980 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
20 + | £0.102 | £2.04 |
*price indicative
- RS Stock No.:
- 809-0865
- Mfr. Part No.:
- FDC642P
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 4 A | |
Maximum Drain Source Voltage | 20 V | |
Series | PowerTrench | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 100 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Length | 3mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 11 nC @ 4.5 V | |
Number of Elements per Chip | 1 | |
Width | 1.7mm | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 11 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Width 1.7mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.