onsemi QFET P-Channel MOSFET, 6.6 A, 250 V, 3-Pin TO-3PN FQA9P25
- RS Stock No.:
- 808-8991
- Mfr. Part No.:
- FQA9P25
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£13.75
(exc. VAT)
£16.50
(inc. VAT)
FREE delivery for orders over £50.00
- 15 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 + | £2.75 | £13.75 |
*price indicative
- RS Stock No.:
- 808-8991
- Mfr. Part No.:
- FQA9P25
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 6.6 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | TO-3PN | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 620 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 5mm | |
Typical Gate Charge @ Vgs | 29 nC @ 10 V | |
Transistor Material | Si | |
Length | 15.8mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Height | 20.1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.6 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-3PN | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 620 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 29 nC @ 10 V | ||
Transistor Material Si | ||
Length 15.8mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 20.1mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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