onsemi QFET P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220 FQPF27P06
- RS Stock No.:
- 807-5901P
- Mfr. Part No.:
- FQPF27P06
- Brand:
- onsemi
Subtotal 10 units (supplied in a tube)*
£20.60
(exc. VAT)
£24.70
(inc. VAT)
FREE delivery for orders over £50.00
- 130 unit(s) ready to ship
| Units | Per unit | 
|---|---|
| 10 + | £2.06 | 
*price indicative
- RS Stock No.:
- 807-5901P
- Mfr. Part No.:
- FQPF27P06
- Brand:
- onsemi
| Select all | Attribute | Value | 
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.3mm | |
| Select all | ||
|---|---|---|
| Brand onsemi | ||
| Channel Type P | ||
| Maximum Continuous Drain Current 19 A | ||
| Maximum Drain Source Voltage 60 V | ||
| Package Type TO-220 | ||
| Series QFET | ||
| Mounting Type Through Hole | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 70 mΩ | ||
| Channel Mode Enhancement | ||
| Minimum Gate Threshold Voltage 2V | ||
| Maximum Power Dissipation 120 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -25 V, +25 V | ||
| Width 4.7mm | ||
| Transistor Material Si | ||
| Length 10.67mm | ||
| Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
| Maximum Operating Temperature +175 °C | ||
| Number of Elements per Chip 1 | ||
| Minimum Operating Temperature -55 °C | ||
| Height 16.3mm | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
