onsemi PowerTrench N-Channel MOSFET, 62 A, 200 V, 3-Pin TO-220 FDP2614
- RS Stock No.:
- 806-3557P
- Mfr. Part No.:
- FDP2614
- Brand:
- onsemi
Subtotal 10 units (supplied in a tube)*
£19.60
(exc. VAT)
£23.50
(inc. VAT)
FREE delivery for orders over £50.00
- 999,999,999 unit(s) shipping from 25 December 2025
Units | Per unit |
---|---|
10 + | £1.96 |
*price indicative
- RS Stock No.:
- 806-3557P
- Mfr. Part No.:
- FDP2614
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 62 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220 | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 27 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 260 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 4.83mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 76 nC @ 10 V | |
Length | 10.67mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Height | 16.51mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 27 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 260 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.83mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 76 nC @ 10 V | ||
Length 10.67mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.