onsemi PowerTrench N-Channel MOSFET, 22 A, 100 V, 8-Pin Power 33 FDMC86102LZ
- RS Stock No.:
- 806-3507
- Mfr. Part No.:
- FDMC86102LZ
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.76
(exc. VAT)
£8.11
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,780 unit(s) shipping from 20 October 2025
- Plus 999,997,215 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £1.352 | £6.76 |
| 10 - 95 | £1.142 | £5.71 |
| 100 - 245 | £0.862 | £4.31 |
| 250 - 495 | £0.832 | £4.16 |
| 500 + | £0.732 | £3.66 |
*price indicative
- RS Stock No.:
- 806-3507
- Mfr. Part No.:
- FDMC86102LZ
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | Power 33 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 41 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 15.3 nC @ 10 V, 7.6 nC @ 4.5 V | |
| Length | 3.3mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.3mm | |
| Transistor Material | Si | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type Power 33 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 41 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 15.3 nC @ 10 V, 7.6 nC @ 4.5 V | ||
Length 3.3mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 3.3mm | ||
Transistor Material Si | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.