onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 12 A, 16 A, 30 V, 8-Pin Power 33 FDMC7208S
- RS Stock No.:
- 806-3490P
- Mfr. Part No.:
- FDMC7208S
- Brand:
- onsemi
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£56.80
(exc. VAT)
£68.15
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,210 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 95 | £1.136 |
| 100 - 495 | £0.986 |
| 500 - 995 | £0.866 |
| 1000 + | £0.788 |
*price indicative
- RS Stock No.:
- 806-3490P
- Mfr. Part No.:
- FDMC7208S
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A, 16 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench, SyncFET | |
| Package Type | Power 33 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 7.5 mΩ, 12.4 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.9 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, -12 V, +12 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V, 14 nC @ 5 V, 26 nC @ 10 V, 6.7 nC @ 5 V | |
| Number of Elements per Chip | 2 | |
| Width | 3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A, 16 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench, SyncFET | ||
Package Type Power 33 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 7.5 mΩ, 12.4 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.9 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, -12 V, +12 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V, 14 nC @ 5 V, 26 nC @ 10 V, 6.7 nC @ 5 V | ||
Number of Elements per Chip 2 | ||
Width 3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.