onsemi PowerTrench P-Channel MOSFET, 10 A, 12 V, 6-Pin MicroFET 2 x 2 FDMA905P
- RS Stock No.:
- 806-3484P
- Mfr. Part No.:
- FDMA905P
- Brand:
- onsemi
Subtotal 10 units (supplied on a continuous strip)*
£1.29
(exc. VAT)
£1.55
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,970 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 + | £0.129 |
*price indicative
- RS Stock No.:
- 806-3484P
- Mfr. Part No.:
- FDMA905P
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 12 V | |
| Series | PowerTrench | |
| Package Type | MicroFET 2 x 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 82 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 2.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 2mm | |
| Typical Gate Charge @ Vgs | 21 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.725mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 12 V | ||
Series PowerTrench | ||
Package Type MicroFET 2 x 2 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 82 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Width 2mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 2mm | ||
Typical Gate Charge @ Vgs 21 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.725mm | ||
Forward Diode Voltage 1.2V | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.