N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK onsemi NDD03N80Z-1G
- RS Stock No.:
- 806-1016
- Mfr. Part No.:
- NDD03N80Z-1G
- Brand:
- ON Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 806-1016
- Mfr. Part No.:
- NDD03N80Z-1G
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Maximum Power Dissipation | 96 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 2.38mm | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Height | 7.62mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 2.38mm | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Height 7.62mm | ||
Minimum Operating Temperature -55 °C | ||