N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-3P IXYS IXFQ50N60P3

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
802-4467
Mfr. Part No.:
IXFQ50N60P3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

145 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

94 nC @ 10 V

Length

15.8mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

4.9mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Series

HiperFET, Polar3

Height

20.3mm