N-Channel MOSFET, 80 A, 600 V, 3-Pin TO-264 IXYS IXFK80N60P3

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

600 V

Package Type

TO-264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.3 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

190 nC @ 10 V

Length

19.96mm

Transistor Material

Si

Width

5.13mm

Maximum Operating Temperature

+150 °C

Series

HiperFET, Polar3

Minimum Operating Temperature

-55 °C

Height

26.16mm