IXYS HiperFET, Polar3 N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3
- RS Stock No.:
- 802-4357P
- Mfr. Part No.:
- IXFB210N30P3
- Brand:
- IXYS
Bulk discount available
Subtotal 13 units (supplied in a tube)*
£281.97
(exc. VAT)
£338.39
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 13 + | £21.69 |
*price indicative
- RS Stock No.:
- 802-4357P
- Mfr. Part No.:
- IXFB210N30P3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 210 A | |
| Maximum Drain Source Voltage | 300 V | |
| Package Type | PLUS264 | |
| Series | HiperFET, Polar3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 1.89 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 268 nC @ 10 V | |
| Length | 20.29mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 26.59mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 210 A | ||
Maximum Drain Source Voltage 300 V | ||
Package Type PLUS264 | ||
Series HiperFET, Polar3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 1.89 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 268 nC @ 10 V | ||
Length 20.29mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 26.59mm | ||
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