onsemi PowerTrench N-Channel MOSFET, 16 A, 40 V, 3-Pin DPAK FDD8453LZ
- RS Stock No.:
- 802-2976P
- Mfr. Part No.:
- FDD8453LZ
- Brand:
- onsemi
Subtotal 100 units (supplied on a continuous strip)*
£98.50
(exc. VAT)
£118.20
(inc. VAT)
FREE delivery for orders over £50.00
- Final 570 unit(s), ready to ship
Units | Per unit |
---|---|
100 - 240 | £0.985 |
250 + | £0.854 |
*price indicative
- RS Stock No.:
- 802-2976P
- Mfr. Part No.:
- FDD8453LZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 16 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 6.7 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 65 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 46 nC @ 10 V | |
Length | 6.73mm | |
Number of Elements per Chip | 1 | |
Width | 6.22mm | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 46 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Automotive N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.