IXYS HiperFET, Q3-Class N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3
- RS Stock No.:
- 801-1386P
- Mfr. Part No.:
- IXFH30N50Q3
- Brand:
- IXYS
Bulk discount available
Subtotal 6 units (supplied in a tube)*
£58.98
(exc. VAT)
£70.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 258 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 6 - 14 | £9.83 |
| 15 + | £9.33 |
*price indicative
- RS Stock No.:
- 801-1386P
- Mfr. Part No.:
- IXFH30N50Q3
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-247 | |
| Series | HiperFET, Q3-Class | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 690 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 16.26mm | |
| Width | 5.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 62 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.26mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-247 | ||
Series HiperFET, Q3-Class | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 690 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 16.26mm | ||
Width 5.3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 62 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 16.26mm | ||