IXYS HiperFET, Q3-Class N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3
- RS Stock No.:
- 801-1376
- Mfr. Part No.:
- IXFB62N80Q3
- Brand:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 801-1376
- Mfr. Part No.:
- IXFB62N80Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 62 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | HiperFET, Q3-Class | |
| Package Type | PLUS264 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 1.56 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Width | 5.31mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 270 nC @ 10 V | |
| Length | 20.29mm | |
| Height | 26.59mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 800 V | ||
Series HiperFET, Q3-Class | ||
Package Type PLUS264 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 1.56 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Width 5.31mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 270 nC @ 10 V | ||
Length 20.29mm | ||
Height 26.59mm | ||
Minimum Operating Temperature -55 °C | ||