Nexperia N-Channel MOSFET, 44 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN9R5-30YLC,115
- RS Stock No.:
- 798-3044P
- Mfr. Part No.:
- PSMN9R5-30YLC,115
- Brand:
- Nexperia
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£44.60
(exc. VAT)
£53.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,990 unit(s) shipping from 23 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 190 | £0.446 |
| 200 - 390 | £0.437 |
| 400 - 790 | £0.424 |
| 800 + | £0.415 |
*price indicative
- RS Stock No.:
- 798-3044P
- Mfr. Part No.:
- PSMN9R5-30YLC,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | LFPAK, SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 12.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.95V | |
| Minimum Gate Threshold Voltage | 1.05V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.1mm | |
| Transistor Material | Si | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 10.4 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type LFPAK, SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 12.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.95V | ||
Minimum Gate Threshold Voltage 1.05V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.1mm | ||
Transistor Material Si | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 10.4 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors