Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115
- RS Stock No.:
- 798-2895P
- Mfr. Part No.:
- PSMN0R9-25YLC,115
- Brand:
- Nexperia
Bulk discount available
Subtotal 30 units (supplied on a continuous strip)*
£38.70
(exc. VAT)
£46.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,131 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 30 - 72 | £1.29 |
| 75 - 147 | £1.207 |
| 150 - 297 | £1.11 |
| 300 + | £1.02 |
*price indicative
- RS Stock No.:
- 798-2895P
- Mfr. Part No.:
- PSMN0R9-25YLC,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | LFPAK, SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 1.25 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.95V | |
| Minimum Gate Threshold Voltage | 1.05V | |
| Maximum Power Dissipation | 272 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.1mm | |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type LFPAK, SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 1.25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.95V | ||
Minimum Gate Threshold Voltage 1.05V | ||
Maximum Power Dissipation 272 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.1mm | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors