Nexperia N-Channel MOSFET, 9 A, 30 V, 8-Pin DFN2020 PMPB11EN,115
- RS Stock No.:
- 798-2779P
- Mfr. Part No.:
- PMPB11EN,115
- Brand:
- Nexperia
Subtotal 10 units (supplied on a continuous strip)*
£2.25
(exc. VAT)
£2.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 11,790 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £0.225 |
*price indicative
- RS Stock No.:
- 798-2779P
- Mfr. Part No.:
- PMPB11EN,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 12.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 2.1mm | |
| Typical Gate Charge @ Vgs | 13.7 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 2.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.65mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 12.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 2.1mm | ||
Typical Gate Charge @ Vgs 13.7 nC @ 10 V | ||
Transistor Material Si | ||
Width 2.1mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.65mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors