Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
- RS Stock No.:
- 796-5077P
- Mfr. Part No.:
- TK100E08N1
- Brand:
- Toshiba
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£20.60
(exc. VAT)
£24.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,188 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 19 | £2.06 |
| 20 - 49 | £1.95 |
| 50 - 249 | £1.73 |
| 250 + | £1.62 |
*price indicative
- RS Stock No.:
- 796-5077P
- Mfr. Part No.:
- TK100E08N1
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 214 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 255 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.16mm | |
| Width | 4.45mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Height | 15.1mm | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 214 A | ||
Maximum Drain Source Voltage 80 V | ||
Series TK | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 255 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.16mm | ||
Width 4.45mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Height 15.1mm | ||
MOSFET Transistors, Toshiba