Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
- RS Stock No.:
- 796-5070P
- Mfr. Part No.:
- TK100E10N1
- Brand:
- Toshiba
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£64.75
(exc. VAT)
£77.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 327 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 99 | £2.59 |
| 100 - 349 | £2.47 |
| 350 - 499 | £2.20 |
| 500 + | £2.05 |
*price indicative
- RS Stock No.:
- 796-5070P
- Mfr. Part No.:
- TK100E10N1
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 207 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 255 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.16mm | |
| Width | 4.45mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 15.1mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 207 A | ||
Maximum Drain Source Voltage 100 V | ||
Series TK | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 255 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.16mm | ||
Width 4.45mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 15.1mm | ||
MOSFET Transistors, Toshiba