onsemi N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 NTR5198NLT1G
- RS Stock No.:
- 796-1381P
- Mfr. Part No.:
- NTR5198NLT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£12.70
(exc. VAT)
£15.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,225 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | £0.127 |
| 250 - 475 | £0.11 |
| 500 - 975 | £0.097 |
| 1000 + | £0.088 |
*price indicative
- RS Stock No.:
- 796-1381P
- Mfr. Part No.:
- NTR5198NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 155 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 5.1 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.01mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 155 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 5.1 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.01mm | ||
- COO (Country of Origin):
- CN
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