Diodes Inc N-Channel MOSFET, 1.4 A, 12 V, 3-Pin X1-DFN1006 DMN1150UFB-7B
- RS Stock No.:
- 790-4583P
- Mfr. Part No.:
- DMN1150UFB-7B
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£67.50
(exc. VAT)
£81.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 19,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 2450 | £0.135 |
| 2500 - 4950 | £0.129 |
| 5000 - 9950 | £0.125 |
| 10000 + | £0.121 |
*price indicative
- RS Stock No.:
- 790-4583P
- Mfr. Part No.:
- DMN1150UFB-7B
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.4 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | X1-DFN1006 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 210 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -6 V, +6 V | |
| Typical Gate Charge @ Vgs | 1.5 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.08mm | |
| Width | 0.675mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 0.48mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.4 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type X1-DFN1006 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -6 V, +6 V | ||
Typical Gate Charge @ Vgs 1.5 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 1.08mm | ||
Width 0.675mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 0.48mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.