N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO Vishay SIR788DP-T1-GE3

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
787-9349
Mfr. Part No.:
SIR788DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.3 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

50 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

5.26mm

Length

6.25mm

Height

1.12mm

Series

SkyFET

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, Plus Integrated Schottky (SkyFET®), Vishay Semiconductor



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