Vishay TrenchFET P-Channel MOSFET, 12 A, 12 V, 6-Pin PowerPAK SC-70 SIA447DJ-T1-GE3
- RS Stock No.:
- 787-9288P
- Mfr. Part No.:
- SIA447DJ-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£24.60
(exc. VAT)
£29.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,060 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 490 | £0.246 |
| 500 - 990 | £0.22 |
| 1000 - 2490 | £0.135 |
| 2500 + | £0.124 |
*price indicative
- RS Stock No.:
- 787-9288P
- Mfr. Part No.:
- SIA447DJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 12 V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SC-70 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 71 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 19 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 52 nC @ 8 V | |
| Length | 1.7mm | |
| Width | 1.7mm | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 12 V | ||
Series TrenchFET | ||
Package Type PowerPAK SC-70 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 71 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 52 nC @ 8 V | ||
Length 1.7mm | ||
Width 1.7mm | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
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