Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3
- RS Stock No.:
- 787-9131P
- Mfr. Part No.:
- SI4090DY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£49.50
(exc. VAT)
£59.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,495 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £0.99 |
| 125 - 245 | £0.748 |
| 250 - 495 | £0.618 |
| 500 + | £0.486 |
*price indicative
- RS Stock No.:
- 787-9131P
- Mfr. Part No.:
- SI4090DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | ThunderFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 7.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 45.6 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 100 V | ||
Series ThunderFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 7.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 45.6 nC @ 10 V | ||
Transistor Material Si | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor