Vishay Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3
- RS Stock No.:
- 787-9055P
- Mfr. Part No.:
- SI1029X-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£70.00
(exc. VAT)
£84.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,560 unit(s), ready to ship
Units | Per unit |
|---|---|
| 200 - 480 | £0.35 |
| 500 - 980 | £0.317 |
| 1000 - 1980 | £0.298 |
| 2000 + | £0.279 |
*price indicative
- RS Stock No.:
- 787-9055P
- Mfr. Part No.:
- SI1029X-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 190 mA, 300 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SC-89-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 3 Ω, 8 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 250 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.7mm | |
| Typical Gate Charge @ Vgs | 1700 nC @ 15 V, 750 nC @ 4.5 V | |
| Length | 1.7mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Height | 0.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 190 mA, 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SC-89-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 3 Ω, 8 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 250 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 1700 nC @ 15 V, 750 nC @ 4.5 V | ||
Length 1.7mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor