Vishay Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC SI4946BEY-T1-GE3
- RS Stock No.:
- 787-9027P
- Mfr. Part No.:
- SI4946BEY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£73.50
(exc. VAT)
£88.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,725 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 120 | £1.47 |
| 125 - 245 | £1.386 |
| 250 - 495 | £1.298 |
| 500 + | £1.21 |
*price indicative
- RS Stock No.:
- 787-9027P
- Mfr. Part No.:
- SI4946BEY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.5 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 52 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.7 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Width | 4mm | |
| Height | 1.55mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.7 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Width 4mm | ||
Height 1.55mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor