Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3

RS Stock No.:: 787-9027P
Mfr. Part No.:: SI4946BEY-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3

2180 In stock - FREE next working day delivery available

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

£0.476

(exc. VAT)

£0.571

(inc. VAT)

Units	Per unit
5 +	£0.476

RS Stock No.:: 787-9027P
Mfr. Part No.:: SI4946BEY-T1-GE3
Brand:: Vishay

Si4946BEY, Dual N-Channel 60V (Drain-Source) 175degC MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Width	4mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	17 nC @ 10 V
Number of Elements per Chip	2
Transistor Material	Si
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC Vishay SI4946BEY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor