Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC

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Subtotal 200 units (supplied on a reel)*

£86.20

(exc. VAT)

£103.40

(inc. VAT)

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200 - 480£0.431
500 - 980£0.406
1000 - 1980£0.381
2000 +£0.355

*price indicative

Packaging Options:
RS Stock No.:
787-9020P
Mfr. Part No.:
SI4532CDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.78W

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Width

4 mm

Standards/Approvals

No

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor