Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
- RS Stock No.:
- 787-9020P
- Mfr. Part No.:
- SI4532CDY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£86.20
(exc. VAT)
£103.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 4,360 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 480 | £0.431 |
| 500 - 980 | £0.406 |
| 1000 - 1980 | £0.381 |
| 2000 + | £0.355 |
*price indicative
- RS Stock No.:
- 787-9020P
- Mfr. Part No.:
- SI4532CDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.3 A, 6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 65 mΩ, 140 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.78 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 6 nC @ 10 V, 7.8 nC @ 10 V | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.3 A, 6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 65 mΩ, 140 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.78 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6 nC @ 10 V, 7.8 nC @ 10 V | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor