Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3
- RS Stock No.:
- 787-9005P
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£17.60
(exc. VAT)
£21.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,980 unit(s) shipping from 28 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 480 | £0.088 |
| 500 - 980 | £0.078 |
| 1000 - 1980 | £0.068 |
| 2000 + | £0.067 |
*price indicative
- RS Stock No.:
- 787-9005P
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 630 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SC-75 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.1 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 240 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Length | 1.68mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.3 nC @ 8 V | |
| Transistor Material | Si | |
| Width | 0.86mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 630 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SC-75 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.1 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 240 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Length 1.68mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.3 nC @ 8 V | ||
Transistor Material Si | ||
Width 0.86mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
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